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There are many different ways in which the dual damascene process is used. The animation shows an overview of one process: -In the dual damascene process, a low-k dielectric is added. -CMP is used to remove dielectric down to depth of the vias. -Silicon nitride is deposited and the resist is added and exposed. -The surface is etched and a second layer of low-k dielectric is added. -CMP is used to remove the dielectric down to the final thickness of the metal lines. -Resist is added for vias and metal lines. -The surface is exposed and removed. -The dielectric is etched and the resist is removed. -The metal barrier and metal are added. -Depending on the process, this could be copper. -The metal and metal barrier are removed through CMP. THe objective is to explain the dual damascene process.This simulation is from Module 068 of the Process & Equipment III Cluster of the MATEC Module Library (MML).
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