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Development of Animated Simulation of Semiconductor Electronic Devices for Classroom Demonstration

Website Address:https://www.curriki.org/oer/Development-of-Animated-Simulation-of-Semiconductor-Electronic-Devices-for-Classroom-Demonstration-165963
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Learning RegistryLearning RegistryDistrict of Columbia, District of Columbia, US,
November 11, 2016
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Type:

Other

Description:

In this paper, the authors describe the development of animation videos based on computer simulation of semiconductor electronic devices for classroom demonstration of abstract concepts. The device physics taught in junior-level required courses in electrical engineering are considered and include: p-n diode, metal oxide semiconductor (MOS) capacitor, MOS field effect transistor (FET), and bipolar junction transistor (BJT). The concepts and methodology will be described, followed by several examples.

Subjects:

  • Science > Engineering
  • Science > Technology
  • Science > Physics
  • Education > General

Education Levels:

  • Grade 1
  • Grade 2
  • Grade 3
  • Grade 4
  • Grade 5
  • Grade 6
  • Grade 7
  • Grade 8
  • Grade 9
  • Grade 10
  • Grade 11
  • Grade 12

Keywords:

NSDL_SetSpec_ncs-NSDL-COLLECTION-000-003-112-021,Education,NSDL,Undergraduate (Upper Division),Technical Education (Upper Division),Technical Education (Lower Division),Physics,Educational Technology -- Educational media,Undergraduate (Lower Division),Science -- Physics,Higher Education,Engineering,oai:nsdl.org:2200/20120826204746598T,Science -- Instructional issues,Science -- Engineering,Technology,Vocational/Professional Development Education,Graduate/Professional,Science -- Technology

Language:

English

Access Privileges:

Public - Available to anyone

License Deed:

Creative Commons Attribution Non-Commercial Share Alike

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In this paper, the authors describe the development of animation videos based on computer simulation of semiconductor electronic devices for classroom demonstration of abstract concepts. The device physics taught in junior-level required courses in electrical engineering are considered and include: p-n diode, metal oxide semiconductor (MOS) capacitor, MOS field effect transistor (FET), and bipolar junction transistor (BJT). The concepts and methodology will be described, followed by several examples.
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