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This is the latest issue of the IBM Journal of Research and Development. "This double issue contains fifteen papers which address the challenges of scaling CMOS devices as physical limits are approached." Specifically, research teams report on topics such as silicon-on-insulator technology, new CMOS materials and device structures, dynamic random-access memory, and many others. The papers provide views of how far scaling could progress in the future and what constrains further advancement. Several back issues of the journal are also available, and each focuses on a different area of research.

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      Keywords:

      oai:nsdl.org:2200/20111120195703883T,NSDL,NSDL_SetSpec_internetscout

      Language:

      English

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      Public - Available to anyone

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      Creative Commons Attribution Non-Commercial Share Alike

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