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This website includes an animation which illustrates the diffusion process. The two models that have been developed to explain the mechanism for the diffusion of dopants into silicon are the Vacancy model and the Interstitial model. It is the different bonding characteristics of the dopants with silicon that determine the diffusion mechanism. Although each model is based on these differences, they are not mutually exclusive. Objective: Explain the difference between the Vacancy and Interstitial diffusion models. You can find this animation under the heading "Process & Equipment III." This simulation is from Module 019 of the Process & Equipment III Cluster of the MATEC Module Library (MML). To view other clusters or for more information about the MML visit http://matec.org/ps/library3/process_I.shtmlKey
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