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This website includes an animation which shows the plasma etching of silicon dioxide. In this type of plasma etching process, a chlorine gas and argon gas mixture is used. The chlorine gas neutral charge molecules bond with the surface silicon dioxide molecules and create silicon chloride molecule. Through the bombardment of the plasma charged Argon molecules the silicon chloride molecules are released from the surface layer. The etch continues till the exposed silicon dioxide material is removed. Objective: Describe in detail the etch process. This simulation is from Module 047 of the Process and Equipment II of the MATEC Module Library (MML). You can find this animation under the heading "Process & Equipment II." To view other clusters or for more information about the MML visit http://matec.org/ps/library3/process_I.shtml
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